Deepakkumar Yadav

Principle of Operation of IGBT The principle of operation of IGBT is similar to that of a MOSFET. The operation can be divided into two parts : Creation of the inversion layer and Conductivity modulation. 1. Creation of inversion layer in IGBT The operation of IGBT is based on the principle of creation of inversion … Read more

IV Characteristics of IGBT (Output Characteristics of IGBT) Q. Draw symbols and V-I characteristics of following device : IGBT Q. Draw symbol and characteristics of power semiconductor and its important information and application. The IV characteristics of IGBT is as shown in Figure. In the forward direction they are similar to those of the logic … Read more

Basic Structure of IGBT Q. Draw symbol of IGBT and state one application. Q. Draw symbols and V-I characteristics of following device : IGBT Q. Draw the symbols of : 1. SCR 2. IGBT Q. Draw symbol and characteristics of IGBT and its important information and application. Q. Draw construction of IGBT. Give any two … Read more

Insulated Gate Bipolar Transistor (IGBT) The power BJT has advantage of low on state power dissipation, but it cannot be switched at faster rates due to longer turn-off time. The power MOSFET can be switched at much higher frequency but has a drawback of higher on state power loss. Therefore attempts we made to combine … Read more

Merits, Demerits and Applications of Power MOSFET Merits of a Power MOSFET (Advantages of MOSFET) The input resistance of MOSFEs is high and they are voltage controlled devices. Therefore the gate driving circuit for MOSFET is simpler. Power MOSFETS can operate at high switching frequency (typically upto 100 kHz). This is due to the fact … Read more

Transfer Characteristics of n-channel Enhancement Type MOSFET The transfer characteristics of a n-channel enhancement MOSFET are as shown in Figure. Note that the drain current is zero for VGS ≤ VTN For an n-channel E-MOSFET the threshold voltage is denoted by VTN and for a p-channel E-MOSFET the threshold voltage is denoted by VTP. The transfer characteristics shown … Read more

I-V Characteristics of MOSFET (Output Characteristics) 1. The I-V characteristics (output characteristics) of power MOSFET is shown in Figure. The source terminal is common between the input and output of the MOSFET. The output characteristics is a graph of drain current iD versus drain to source voltage VDS for different values of gate to source voltage VGS as … Read more

MOSFET Working Principle of Operation With gate to source voltage VGS = 0 the MOSFET is equivalent to two back to back diodes connected as shown in Figure (a). The diodes are formed between n+ and P layers as shown. The basic structure of MOSFET is very much similar to the BJT. The only difference is the … Read more

Simplified Structure of Power MOSFET Figure (A) shows the simplified structure of power MOSFET and Figure (B) shows the circuit symbols. Figure (A) Figure (B) The n+ p n– n+ structure shown in the Figure (A) is ow termed as enhancement mode n channel MOSFET. A structure of a p-channel MOSFET has exactly the opposite doping profile. The doping … Read more