Deepakkumar Yadav
Operation of Static Induction Thyristors (SIT) Anode is connected to a positive voltage with respect to cathode and a positive voltage pulse is applied to the gates Figure (a). Figure (a) The depletion region is filled with carriers and the device is turned ON. The anode current flows from anode to cathode. Now refer Figure … Read more
Important characteristics of SIT (Static Induction Thyristor) Symbol of SIT Switching speed : 1 to 6 µS Voltage rating : upto 2500 V Current rating : only upto 500 A The biggest disadvantage of SIT is that it is extremely sensitive to the perturbations in the manufacturing process. Small variations in the manufacturing process can … Read more
For protection of transformer against to overcurrent which protection is provided To protect transformer we mostly proved protection against overcurrent, overvoltage, undervoltage and under frequency. In that most important is Overcurrent protection, we use Circuit Breaker for protection of transformer. Types of Circuit breaker use for protection of Transformer 1. Air Circuit Breaker (ACB) 2. … Read more
Static Induction Thyristors (SIT) Construction and output characteristics A SIT or SI-thyristor, is a self controlled GTO like ON-OFF device. It is a three terminal device. The three terminals are Anode, Cathode and Gate. The characteristics of SIT are very similar to those of a power MOSFET. It is turned on by applying a positive … Read more
Transformer Rated power (KVA) Impedance % Up to 630 4 % 631 to 1 250 5 % 1 251 to 2 5oo 6 % 2 501 to 6 300 7 % 6 301 to 25 000 8 % 25 001 to 40 000 9 % 40 001 to 63 000 10 % 63 001 to … Read more
Advantages, Disadvantages and Applications of IGBT Q. Draw symbol of IGBT and state one application of each. Q. State two advantages of IGBT. Q. Draw symbol and characteristics of IGBT power semiconductor and its important information and application. Q. Draw construction of IGBT. Give any two advantages of IGBT. Full form of IGBT :- Insulated … Read more
Principle of Operation of IGBT The principle of operation of IGBT is similar to that of a MOSFET. The operation can be divided into two parts : Creation of the inversion layer and Conductivity modulation. 1. Creation of inversion layer in IGBT The operation of IGBT is based on the principle of creation of inversion … Read more
IV Characteristics of IGBT (Output Characteristics of IGBT) Q. Draw symbols and V-I characteristics of following device : IGBT Q. Draw symbol and characteristics of power semiconductor and its important information and application. The IV characteristics of IGBT is as shown in Figure. In the forward direction they are similar to those of the logic … Read more
Basic Structure of IGBT Q. Draw symbol of IGBT and state one application. Q. Draw symbols and V-I characteristics of following device : IGBT Q. Draw the symbols of : 1. SCR 2. IGBT Q. Draw symbol and characteristics of IGBT and its important information and application. Q. Draw construction of IGBT. Give any two … Read more
Insulated Gate Bipolar Transistor (IGBT) The power BJT has advantage of low on state power dissipation, but it cannot be switched at faster rates due to longer turn-off time. The power MOSFET can be switched at much higher frequency but has a drawback of higher on state power loss. Therefore attempts we made to combine … Read more